2SK1971 silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator, dc - dc converter, motor control outline
to-3pl 1. gate
2. drain
3. source d g s 1 2 3
2SK1971 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current i d 35 a drain peak current i d(pulse) * 1 140 a body to drain diode reverse drain current i dr 35 a channel dissipation pch* 2 200 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK1971 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 25 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds =400 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.19 0.23 w i d = 18 a v gs = 10 v* 1 forward transfer admittance |y fs | 1624s i d = 18 a v ds = 10 v* 1 input capacitance ciss 4320 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 1120 pf reverse transfer capacitance crss 130 pf turn-on delay time t d(on) 50nsi d = 18a v gs = 10 v r l = 1.67 w rise time t r 170 ns turn-off delay time t d(off) 320 ns fall time t f 130 ns body to drain diode forward voltage v df 1.1 v i f =35 a, v gs = 0 body to drain diode reverse recovery time t rr 530 ns i f = 35 a, v gs = 0, dif / dt = 100 a / m s note 1. pulse test
2SK1971 4 300 0 100 50 150 power vs. temperature derating channel dissipation pch (w) case temperature tc (?) 200 100 1000 30 3 0.1 1 30 100 drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 300 0.3 3 10 300 1000 10 s m 1 ms dc operation (tc = 25?) 100 s m pw = 10 ms (1 shot) operation in this area is
limited by r (on) ds 1 10 100 ta = 25? 50 40 30 20 10 0 1020304050 drain to source voltage v (v) ds drain current i (a) d typical output characteristics 10 v pulse test 6 v 4.5 v v = 4 v gs 5.5 v 5 v 50 40 30 20 10 0246810 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics pulse test tc = 25? ?5? 75? v = 20 v ds
2SK1971 5 20 16 12 8 4 0481216 gate to source voltage v (v) gs drain to source saturation voltage
v (on) (v) ds drain to source saturation voltage
vs. gate to source voltage pulse test 20 a i = 10 a d 20 50 a 0.1 5 drain current i (a) d static drain to source on state
resistance r (on) ( ) ds w static drain to source on state
resistance vs. drain current 0.2 0.5 1 2 5 2102050 0.05 100 200 v = 10 v gs pulse test ?0 1.0 0.8 0.6 0.4 0.2 0 40 80 120 case temperature tc (?) static drain to source on
state resistance r (on) ( ) ds w static drain to source on state
resistance vs. temperature pulse test 160 i = 50 a v = 10 v gs d 20 a 10 a 0 forward transfer admittance
vs. drain current 50 20 10 5 2 1 0.5 1 2 5 10 50 100 20 drain current i (a) d forward transfer admittance
| y | (s) fs tc = 25? ?5? 75? v = 20 v
pulse test ds
2SK1971 6 body to drain diode reverse
recovery time reverse drain current i (a) dr reverse recovery time t (ns) rr 0.5 1 2 5 10 20 50 10 20 50 100 200 500 1000 di/dt = 100 a/ s, v = 0
ta = 25? m gs typical capacitance
vs. drain to source voltage 10000 1000 100 10 01020304050 drain to source voltage v (v) ds capacitance c (pf) v = 0
f = 1 mhz gs ciss coss crss dynamic input characteristics 1000 800 600 400 200 40 80 120 160 200 20 16 12 8 4 0 gate charge qg (nc) drain to source voltage v (v) ds v = 400 v
250 v
100 v dd v i = 35 a ds d gate to source voltage v (v) gs v gs 0 v = 400 v
250 v
100 v dd switching characteristics drain current i (a) d 0.5 1 2 5 10 20 50 10 20 50 100 200 500 1000 switching time t (ns) t t (on) t t (off) v = 10 v, v = 30 v
pw = 5 s, duty 1% gs m dd : <
= d r f d
2SK1971 7 0 reverse drain current vs.
source to drain voltage 50 40 30 20 10 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr pulse test v = 10 v gs v = 0, ? v gs 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width pw p dm d = t pw q ch? (t) = g s (t) ? q ch?
q ch? = 0.625?/w, t c = 25? t t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse
2SK1971 8 switching time test circuit vin monitor vout monitor r l v dd
30 v d.u.t 50 w vin
10 v = . . vout waveforms t d (on) 10% 10% 90% 90% 10% 90% vin t r t d (off) t f
2SK1971 9 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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